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PSMN006-20K Datasheet(PDF) 2 Page - NXP Semiconductors |
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PSMN006-20K Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 12 page Philips Semiconductors PSMN006-20K TrenchMOS™ ultra low level FET Product data Rev. 01 — 30 May 2002 2 of 12 9397 750 09631 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 5. Quick reference data 6. Limiting values Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) 25 °C ≤ T j ≤ 150 °C - 20 V ID drain current (DC) Tsp =25 °C; VGS = 4.5 V - 32 A Ptot total power dissipation Tsp =25 °C - 8.3 W Tj junction temperature - 150 °C RDSon drain-source on-state resistance VGS = 4.5 V; ID = 5 A; Tj =25 °C 4.2 5 m Ω VGS = 2.5 V; ID = 5 A; Tj =25 °C 4.8 5.7 m Ω VGS = 1.8 V; ID = 5 A; Tj =25 °C 5.7 8.2 m Ω Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 150 °C - 20 V ID drain current (DC) Tsp =25 °C; VGS = 4.5 V; Figure 2 and 3 -32 A VGS gate-source voltage - ±10 V IDM peak drain current Tsp =25 °C; pulsed; tp ≤ 10 µs; Figure 3 -60 A Ptot total power dissipation Tsp =25 °C; Figure 1 - 8.3 W Tstg storage temperature - 150 °C Tj operating junction temperature −55 +150 °C Source-drain diode IS source (diode forward) current (DC) Tsp =25 °C - 7.5 A ISM peak source (diode forward) current Tsp =25 °C; pulsed; tp ≤ 10 µs - 30 A |
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