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NIF62514 Datasheet(PDF) 2 Page - ON Semiconductor |
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NIF62514 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page NIF62514 http://onsemi.com 2 MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Clamped Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) (VGS = 0 Vdc, ID = 250 mAdc, TJ = 150°C) V(BR)DSS 42 42 46 45 50 50 Vdc Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) (VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS - - 0.5 2.0 2.0 10 mAdc Gate Input Current (VGS = 5.0 Vdc, VDS = 0 Vdc) (VGS = -5.0 Vdc, VDS = 0 Vdc) IGSS - - 50 550 100 1000 mAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 150 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 - 1.7 4.0 2.0 6.0 Vdc mV/ °C Static Drain-to-Source On-Resistance (Note 4) (VGS = 10 Vdc, ID = 1.4 Adc, TJ @ 25°C) (VGS = 10 Vdc, ID = 1.4 Adc, TJ @ 150°C) RDS(on) - - 90 165 100 190 mW Static Drain-to-Source On-Resistance (Note 4) (VGS = 5.0 Vdc, ID = 1.4 Adc, TJ @ 25°C) (VGS = 5.0 Vdc, ID = 1.4 Adc, TJ @ 150°C) RDS(on) - - 105 185 120 210 mW Source-Drain Forward On Voltage (IS = 7 A, VGS = 0 V) VSD - 1.05 - V SWITCHING CHARACTERISTICS Turn-on Delay Time 10% Vin to 10% ID RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V td(on) - 4.0 8.0 ms Turn-on Rise Time 10% ID to 90% ID RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V trise - 11 20 ms Turn-of f Delay Time 90% Vin to 90% ID RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V td(off) - 32 50 ms Turn-of f Fall Time 90% ID to 10% ID RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V tfall - 27 50 ms Slew-Rate On RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V -dV DS/dton - 1.5 2.5 ms Slew-Rate Off RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V dVDS/dtoff - 0.6 1.0 ms SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) Current Limit (VGS = 5.0 Vdc) (VGS = 5.0 Vdc, TJ = 150°C) ILIM 6.0 3.0 9.0 5.0 11 8.0 Adc Current Limit (VGS = 10 Vdc) (VGS = 10 Vdc, TJ = 150°C) ILIM 7.0 4.0 10.5 7.5 13 10 Adc Temperature Limit (Turn-of f) VGS = 5.0 Vdc TLIM(off) 150 175 200 °C Temperature Limit (Circuit Reset) VGS = 5.0 Vdc TLIM(on) 135 160 185 °C Temperature Limit (Turn-of f) VGS = 10 Vdc TLIM(off) 150 155 185 °C Temperature Limit (Circuit Reset) VGS = 10 Vdc TLIM(on) 130 140 170 °C ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Electro-Static Discharge Capability Human Body Model (HBM) ESD 4000 - - V Electro-Static Discharge Capability Machine Model (MM) ESD 400 - - V 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. |
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