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NIF62514 Datasheet(PDF) 2 Page - ON Semiconductor

Part # NIF62514
Description  Self-protected FET with Temperature and Current Limit
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NIF62514 Datasheet(HTML) 2 Page - ON Semiconductor

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NIF62514
http://onsemi.com
2
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Clamped Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
(VGS = 0 Vdc, ID = 250 mAdc, TJ = 150°C)
V(BR)DSS
42
42
46
45
50
50
Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
-
-
0.5
2.0
2.0
10
mAdc
Gate Input Current
(VGS = 5.0 Vdc, VDS = 0 Vdc)
(VGS = -5.0 Vdc, VDS = 0 Vdc)
IGSS
-
-
50
550
100
1000
mAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 150 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
-
1.7
4.0
2.0
6.0
Vdc
mV/
°C
Static Drain-to-Source On-Resistance (Note 4)
(VGS = 10 Vdc, ID = 1.4 Adc, TJ @ 25°C)
(VGS = 10 Vdc, ID = 1.4 Adc, TJ @ 150°C)
RDS(on)
-
-
90
165
100
190
mW
Static Drain-to-Source On-Resistance (Note 4)
(VGS = 5.0 Vdc, ID = 1.4 Adc, TJ @ 25°C)
(VGS = 5.0 Vdc, ID = 1.4 Adc, TJ @ 150°C)
RDS(on)
-
-
105
185
120
210
mW
Source-Drain Forward On Voltage
(IS = 7 A, VGS = 0 V)
VSD
-
1.05
-
V
SWITCHING CHARACTERISTICS
Turn-on Delay Time
10% Vin to 10% ID
RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V
td(on)
-
4.0
8.0
ms
Turn-on Rise Time
10% ID to 90% ID
RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V
trise
-
11
20
ms
Turn-of f Delay Time
90% Vin to 90% ID
RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V
td(off)
-
32
50
ms
Turn-of f Fall Time
90% ID to 10% ID
RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V
tfall
-
27
50
ms
Slew-Rate On
RL = 4.7 W,
Vin = 0 to 10 V, VDD = 12 V
-dV DS/dton
-
1.5
2.5
ms
Slew-Rate Off
RL = 4.7 W,
Vin = 10 to 0 V, VDD = 12 V
dVDS/dtoff
-
0.6
1.0
ms
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Current Limit
(VGS = 5.0 Vdc)
(VGS = 5.0 Vdc, TJ = 150°C)
ILIM
6.0
3.0
9.0
5.0
11
8.0
Adc
Current Limit
(VGS = 10 Vdc)
(VGS = 10 Vdc, TJ = 150°C)
ILIM
7.0
4.0
10.5
7.5
13
10
Adc
Temperature Limit (Turn-of f)
VGS = 5.0 Vdc
TLIM(off)
150
175
200
°C
Temperature Limit (Circuit Reset)
VGS = 5.0 Vdc
TLIM(on)
135
160
185
°C
Temperature Limit (Turn-of f)
VGS = 10 Vdc
TLIM(off)
150
155
185
°C
Temperature Limit (Circuit Reset)
VGS = 10 Vdc
TLIM(on)
130
140
170
°C
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Electro-Static Discharge Capability
Human Body Model (HBM)
ESD
4000
-
-
V
Electro-Static Discharge Capability
Machine Model (MM)
ESD
400
-
-
V
4. Pulse Test: Pulse Width = 300
ms, Duty Cycle = 2%.


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