MMBF2202PT1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 10 µA)

V(BR)DSS

20

—

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 16 Vdc, VGS = 0 Vdc)

(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

1.0

10

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

—

±100

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

VGS(th)

1.0

1.7

2.4

Vdc

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 200 mAdc)

(VGS = 4.5 Vdc, ID = 50 mAdc)

rDS(on)

—

—

1.5

2.0

2.2

3.5

Ohms

Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)

gFS

—

600

—

mMhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 5.0 V)

Ciss

—

50

—

pF

Output Capacitance

(VDS = 5.0 V)

Coss

—

45

—

Transfer Capacitance

(VDG = 5.0 V)

Crss

—

20

—

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

(V

15 Vd

td(on)

—

2.5

—

ns

Rise Time

(VDD = –15 Vdc,

RL =75 Ω ID = 200 mAdc

tr

—

1.0

—

Turn–Off Delay Time

RL = 75 Ω, ID = 200 mAdc,

VGEN = –10 V, RG = 6.0 Ω)

td(off)

—

16

—

Fall Time

GEN

,

G

)

tf

—

8.0

—

Gate Charge (See Figure 5)

(VDS = 16 V, VGS = 10 V,

ID = 200 mA)

QT

—

2700

—

pC

SOURCE–DRAIN DIODE CHARACTERISTICS

Continuous Current

IS

—

—

0.3

A

Pulsed Current

ISM

—

—

0.75

Forward Voltage(2)

VSD

—

1.5

—

V

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

TYPICAL CHARACTERISTICS

Figure 1. On Resistance versus Gate–Source Voltage

10

0

VGS, GATE–SOURCE VOLTAGE (VOLTS)

ID = 200 mA

8

6

4

2

0

1

234

5

6

78

9

10

Figure 2. On Resistance versus Temperature

4.0

–40

TEMPERATURE (

°C)

VGS = 10 V

ID = 200 mA

3.5

3.0

2.5

2.0

0

– 20

0

20

40

60

80

100

120

140

160

1.5

1.0

0.5

VGS = 4.5 V

ID = 50 mA