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MMBT5210 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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MMBT5210 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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3 / 7 page  Typical Characteristics Collect or-Cutoff Current vs Ambient Temperature 25 50 75 100 125 150 0.1 1 10 T - AMBIE NT TEMP ERATURE ( C) A V = 45V ° CB NPN General Purpose Amplifier (continued) 0.01 0.1 1 10 100 0 200 400 600 800 1000 1200 30 3 0.3 0.03 - 40 o C 25 o C 125 o C V CE = 5.0V I C - CO L L E C T O R CURR E N T (m A) Typical Pulsed Current Gain vs Collector Current 0.1 1 10 100 0.05 0.10 0.15 0.20 0.25 0.30 - 40 o C 25 o C 125 o C ββββ = 10 I C - CO L L E CT O R CURR E N T (m A) Collector-Emitter Saturation Voltage vs Collector Current 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 ββββ = 10 125 o C 25 o C - 40 o C I C - COL L ECT O R CUR REN T (m A ) Base-Emitter Saturation Voltage vs Collector Current 0.1 1 10 0.2 0.4 0.6 0.8 1.0 - 40 o C 25 o C 125 o C V CE = 5 .0 V I C - COL L ECT O R CURRENT (m A) Base-Emitter ON Voltage vs Collector Current |
Similar Part No. - MMBT5210 |
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Similar Description - MMBT5210 |
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