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UN511E Datasheet(PDF) 3 Page - Panasonic Semiconductor |
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UN511E Datasheet(HTML) 3 Page - Panasonic Semiconductor |
3 / 17 page 3 UNR511x Series SJH00022BED Characteristics charts of UNR5110 IC VCE VCE(sat) IC hFE IC Common characteristics chart PT Ta 0 50 100 150 200 250 0 40 80 120 160 Ambient temperature T a (°C) 0 0 −12 −2 −10 −4 −8 −6 −120 −100 −80 −60 −40 −20 Collector-emitter voltage V CE (V) Ta = 25°C IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA − 0.3mA − 0.2mA − 0.1mA −0.01 −0.1 −0.1 −1 −10 −100 −1 −10 −100 Collector current I C (mA) IC / IB = 10 Ta = 75°C 25 °C −25°C 0 −1 100 200 300 400 −10 −100 −1000 Collector current I C (mA) VCE = –10 V Ta = 75°C 25 °C −25°C ■ Electrical Characteristics (continued) T a = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Resistance UNR5114 0.17 0.21 0.25 ratio UNR511H 0.17 0.22 0.27 UNR511T 0.47 UNR511F 0.37 0.47 0.57 UNR511V 1.0 UNR5111/5112/5113/511L 0.8 1.0 1.2 UNR511E 1.70 2.14 2.60 UNR511D 3.7 4.7 5.7 Rank Q R S No-rank hFE 160 to 260 210 to 340 290 to 460 160 to 460 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification |
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