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TSDF02830YR Datasheet(PDF) 2 Page - Vishay Siliconix |
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TSDF02830YR Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page Document Number 85164 Rev. 1, 25-Oct-02 www.vishay.com 2 VISHAY TSDF02830YR Vishay Semiconductors Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Amplifier 1 Following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for UHF applications Amplifier 2 Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for VHF applications Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Amplifier 1 Following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for UHF applications Part Marking Package TSDF02830YR WM1 SOT363R Parameter Test condition Symbol Value Unit Drain - source voltage VDS 8 V Drain current ID 25 mA Gate 1/Gate 2 - source peak current ± IG1/G2SM 10 mA Gate 1 - source voltage + VG1SM 6 V - VG1SM 1.5 V Gate 2 - source voltage ± VG2SM 6 V Total power dissipation Tamb ≤ 60 °C Ptot 200 mW Channel temperature TCh 150 °C Storage temperature range Tstg - 55 to + 150 °C Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu RthChA 450 K/W Parameter Test condition Symbol Value Unit Drain - source voltage VDS 8 V Drain current ID 30 mA Gate 1/Gate 2 - source peak current ± IG1/G2SM 10 mA Gate 1 - source voltage + VG1SM 6 V - VG1SM 1.5 V Gate 2 - source voltage ± V G2SM 6 V Total power dissipation Tamb ≤ 60 °C Ptot 200 mW Channel temperature TCh 150 °C Storage temperature range Tstg - 55 to + 150 °C Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu RthChA 450 K/W Parameter Test condition Symbol Min Typ. Max Unit Drain - source breakdown voltage ID = 10 µA, VG1S = VG2S = 0 V(BR)DSS 12 V Gate 1 - source breakdown voltage + IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS 7 10 V Gate 2 - source breakdown voltage ± I G2S = 10 mA, VG1S = VDS = 0 ± V (BR)G2SS 7 10 V |
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