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 TOSHIBA
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TPCS8101 2003-02-20 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8101 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) l High forward transfer admittance: |Yfs| = 12 S (typ.) l Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) l Enhancement-mode: Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID −6 Drain current Pulse (Note 1) IDP −24 A Drain power dissipation (t = 10 s) (Note 2a) PD 1.5 W Drain power dissipation (t = 10 s) (Note 2b) PD 0.6 W Single pulse avalanche energy (Note 3) EAS 46.8 mJ Avalanche current IAR −6 A Repetitive avalanche energy (Note 2a, Note 4) EAR 0.15 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3R1B Weight: 0.035 g (typ.) Circuit Configuration |
