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TLP2601 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TLP2601 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 9 page TLP2601 2002-09-25 2 Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Input current, low level IFL 0 ¾ 250 µA Input current, high level IFH 6.3 (*) ¾ 20 mA Supply voltage, output VCC 4.5 ¾ 5.5 V High level enable voltage VEH 2.0 ¾ VCC V Low level enable voltage VEL 0 ¾ 0.8 V Fan out (TTL load) N ¾ ¾ 8 ¾ Operating temperature Topr 0 ¾ 70 °C (*) 6.3mA is a guard banded value which allows for at least 20% CTR degradation. Initial input current threshold value is 5.0mA or less. Maximum Ratings (no derating required) Characteristic Symbol Rating Unit Forward current IF 20 mA Reverse voltage VR 5 V Output current IO 25 mA Output voltage VO -0.5~7 V Supply voltage (1 minute maximum) VCC 7 V Enable input voltage (not to exceed VCC by more than 500mV) VE 5.5 V Output collector power dissipation Po 40 mW Operating temperature range Topr -40~85 °C Storage temperature range Tstg -55~125 °C Lead solder temperature (10s) (**) Tsol 260 °C 2500 Vrms Isolation voltage (R.H.≤ 60%,AC 1min., (Note 10) BVS 3540 Vdc (**) 1.6mm below seating plane. |
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