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TLP666J Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TLP666J
Description  TOSHIBA Photocoupler GaAs Ired & Photo-Triac
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP666J
2002-09-25
3
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5V
10
µA
Capacitance
CT
V = 0, f = 1MHz
30
pF
Peak off
-state currentt
IDRM
VDRM = 600V
10
1000
nA
Peak on
-state voltage
VTM
ITM = 100mA
1.7
3.0
V
Holding current
IH
0.6
mA
Critical rate of rise of
off
-state voltage
dv / dt
Vin = 240V, Ta = 85°C
(Note 3)
200
500
V / µs
Critical rate of rise of
commutating voltage
dv / dt(c)
Vin = 60Vrms, IT = 15mA
(Note 3)
0.2
V / µs
(Note 3) dv / dt test circuit
1
2
3
6
4
VCC
Vin
RL
RL
4kΩ
120Ω
Rin
dv / dt(c)
dv / dt
5V, VCC
0V
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Trigger LED current
IFT
VT = 6V
5
10
mA
Inhibited voltage
VIH
IF = rated IFT
50
V
Leakage in inhibited state
IIH
IF = rated IFT
VT = rated VDRM
200
600
µA
Capacitance (input to output)
CS
VS = 0, f = 1MHz
0.8
pF
Isolation resistance
RS
VS = 500V, R.H.≤ 60%
1×10
12
10
14
AC, 1 minute
5000
AC, 1 second, in oil
10000
Vrms
Isolation voltage
BVS
DC, 1 minute, in oil
10000
Vdc




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