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NTE2636 Datasheet(PDF) 1 Page - NTE Electronics

Part # NTE2636
Description  Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode
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Manufacturer  NTE [NTE Electronics]
Direct Link  http://www.nteinc.com
Logo NTE - NTE Electronics

NTE2636 Datasheet(HTML) 1 Page - NTE Electronics

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NTE2636
Silicon NPN Transistor
Horizontal Deflection w/Internal Damper Diode
Features:
D High Breakdown Voltage: VCES = 1500V
D Built–In Damper Diode
D Isolated TO3PFM Type Package
Applications:
D TV/Character Display Horizontal Deflection Output
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCES
1500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Peak Current, IC(peak)
9A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Surge Current, IC(surge)
18A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Diode Forward Current, ID
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (TC = +25°C), PC
50W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ
+150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 500mA, IC = 0
6
–
–
V
Collector Cutoff Current
ICES
VCE = 1500V, RBE = 0
–
–
500
µA
DC Current Transfer Ratio
hFE
VCE = 5V, IC = 1A
–
–
25
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 6A, IB = 1.2A
–
–
5
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 6A, IB = 1.2A
–
–
1.5
V
Collector–Emitter Diode Forward Voltage
VECF
IF = 8A
–
–
2.0
V
Fall Time
tf
ICP = 6A, IB1 = 1.2A, IB2 ` –2.4A,
f H = 31.5kHz
–
–
0.5
µs


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