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TLP141G Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TLP141G
Description  TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP141G
2002-09-25
3
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
10
µA
Capacitance
CT
V = 0, f = 1 MHz
30
pF
Ta = 25°C
10
5000
nA
Off
-state current
IDRM
VAK = 400 V
RGK = 27 kΩ
Ta = 100°C
1
100
µA
Ta = 25°C
10
5000
nA
Reverse current
IRRM
VKA = 70 mA
RGK = 27 kΩ
Ta = 100°C
1
100
µA
On
-state voltage
VTM
ITM = 100 mA
0.9
1.3
V
Holding current
IH
RGK = 27 kΩ
0.2
1
mA
Off
-state dv / dt
dv/dt
VAK = 280 V, RGK = 27 kΩ
5
10
V / µs
Anode to gate
20
Capacitance
Cj
V = 0, f = 1 MHz
Gate to cathode
350
pF
Coupled Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Trigger LED current
IFT
VAK = 6 V, RGK = 27kΩ
4
10
mA
Turn
-on time
ton
IF = 50mA, RGK = 27kΩ
10
µs
Coupled dv / dt
dv/dt
VS = 500 V, RGK = 27kΩ
500
V / µs
Capacitance (input to output)
CS
VS = 0, f = 1 MHz
0.8
pF
Isolation resistance
RS
VS = 500 V, R.H. ≤ 60%
5×10
10
10
14
AC, 1 minute
2500
AC, 1 second, in oil
5000
Vrms
Isolation voltage
BVS
DC, 1 minute, in oil
5000
Vdc




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