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TLP141G Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. TLP141G
Description  TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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 2 page
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TLP141G
2002-09-25
2
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
50
mA
Forward current derating (Ta ≥ 53°C)
∆IF/°C
-0.7
mA / °C
Peak forward current (100 µs pulse, 100 pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Peak forward voltage(RGK = 27kΩ)
VDRM
400
V
Peak reverse voltage(RGK = 27kΩ)
VDRM
400
V
On
-state current
IT(RMS)
150
mA
On
-state current derating (Ta ≥ 25°C)
∆IT / °C
-2.0
mA / °C
Peak one cycle surge current
ITSM
2
A
Peak reverse gate voltage
VGM
5
V
Junction temperature
Tj
100
°C
Storage temperature range
Tstg
-55~125
°C
Operating temperature range
Topr
-55~100
°C
Lead soldering temperature (10 s)
Tsol
260
°C
Isolation voltage (AC, 1 min., RH ≤ 60%)
(Note 1)
BVS
2500
Vrms
(Note 1) Device considered a two terminal device: pins 1 and 3 shorted together and pins 4, 5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VAC
120
Vac
Forward current
IF
15
20
25
mA
Operating temperature
Topr
-25
85
°C
Gate to cathode resistance
RGK
27
33
kΩ
Gate to cathode capacitance
CGK
0.01
0.1
µF




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