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TLP141G Datasheet(PDF) 5 Page - Toshiba Semiconductor

Part No. TLP141G
Description  TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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 5 page
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TLP141G
2002-09-25
5
IFT – RGK
Gate-cathode resistance RGK (kΩ)
100
2
1
50
30
10
5
3
5
10
50
100
200
30
Ta = 25°C
VAK=6V
RL=100Ω
IFT – Ta
dv / dt – RGK
Gate-cathode resistance RGK (kΩ)
100
200
1
100
30
10
3
5
30
10
50
50
VAK=200V
400V
Ta = 25°C
ton – IF
Forward current
IF(mA)
40
30
0
20
10
1
10
20
30
RGK=10kΩ
27kΩ
Ta = 25°C
RL=100Ω
VAA=50V
100
Ambient temperature
Ta (°C)
IH – Ta
80
0.7
0
0.5
0.1
20
40
60
0.3
RGK=10kΩ
27kΩ
Ambient temperature Ta
(°C)
100
20
0
10
5
3
20
40
60
80
VAK=6V
RL=100Ω
RGK=10kΩ
27kΩ
Gate-cathode capacitance CGK(μF)
dv / dt – CGK
0.01
500
0.001
300
5
0.003
0.005
100
50
30
10
Ta = 85°C
VAK = 400V
RGK= 27kΩ
IH – RGK
Gate-cathode resistance RGK (kΩ)
5
0.1
1
3
10
30
50
100
3
1
0.5
0.3
5
200
Ta = 25°C




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