BCR30 datasheet(4/5 Pages) MITSUBISHI

Part #	BCR30

Description	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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4 / 5 page

Feb.1999

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–60 –40 –20 0

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TYPICAL EXAMPLE

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160

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TYPICAL EXAMPLE

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105

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TYPICAL EXAMPLE

ALLOWABLE AMBIENT TEMPERATURE

VS. RMS ON-STATE CURRENT

RMS ON-STATE CURRENT (A)

REPETITIVE PEAK OFF-STATE

CURRENT VS. JUNCTION

TEMPERATURE

JUNCTION TEMPERATURE (°C)

BREAKOVER VOLTAGE VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE (°C)

HOLDING CURRENT VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE (°C)

160

120

100

60

20

0

40

0

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10

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30

160 160 t2.3

120 120 t2.3

100 100 t2.3

ALL FINS ARE BLACK PAINTED

ALUMINUM AND GREASED

NATURAL CONVECTION

CURVES APPLY

REGARDLESS OF

CONDUCTION ANGLE

COMMUTATION CHARACTERISTICS

RATE OF DECAY OF ON-STATE

COMMUTATING CURRENT (A /ms)

BREAKOVER VOLTAGE VS.

RATE OF RISE OF

OFF-STATE VOLTAGE

RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)

160

0

23

101

57 102 23 5 7 103 23 5 7 104

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TYPICAL EXAMPLE

Tj = 125°C

I QUADRANT

III QUADRANT

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5 7 102

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5 7 103

4

44

TYPICAL

EXAMPLE

TC = 125°C

IT = 4A

τ = 500µs

VD = 200V

f = 3Hz

I QUADRANT

III QUADRANT

MINIMUM

CHARAC-

TERISTICS

VALUE

MITSUBISHI SEMICONDUCTOR

〈TRIAC〉

BCR30AM

MEDIUM POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

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