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PBSS8110Z Datasheet(PDF) 6 Page - NXP Semiconductors |
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PBSS8110Z Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page 9397 750 12568 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 26 April 2004 6 of 12 Philips Semiconductors PBSS8110Z 100 V, 1 A NPN low VCEsat (BISS) transistor VCE =10V. (1) Tamb = 100 °C. (2) Tamb =25 °C. (3) Tamb = −55 °C. VCE =10V. (1) Tamb = −55 °C. (2) Tamb =25 °C. (3) Tamb = 100 °C. Fig 3. DC current gain as a function of collector current; typical values. Fig 4. Base-emitter voltage as a function of collector current; typical values. IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb =25 °C. (3) Tamb = −55 °C. IC/IB = 20; Tamb =25 °C. Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values. Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values. 001aaa497 200 400 600 hFE 0 IC (mA) 10−1 104 103 1102 10 (1) (2) (3) 001aaa495 VBE (mV) IC (mA) 10−1 104 103 1102 10 (1) (2) (3) 600 400 800 1000 200 (1) (2) (3) 001aaa504 IC (mA) 10−1 104 103 1102 10 102 103 VCEsat (mV) 10 001aaa505 IC (mA) 10−1 104 103 1102 10 102 103 VCEsat (mV) 10 |
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