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IRLU4343-701 Datasheet(PDF) 1 Page - International Rectifier |
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IRLU4343-701 Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page www.irf.com 1 3/26/04 Notes through are on page 10 PD - 95851 DIGITAL AUDIO MOSFET IRLR4343 IRLU4343 IRLU4343-701 I-Pak Leadform 701 IRLU4343-701 Refer to page 10 for package outline D-Pak IRLR4343 I-Pak IRLU4343 Features l Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency l Low Qrr for Better THD and Lower EMI l 175°C Operating Junction Temperature for Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability l Multiple Package Options Description This Digital Audio HEXFET ® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. S D G VDS 55 V RDS(ON) typ. @ VGS = 10V 42 m : RDS(ON) typ. @ VGS = 4.5V 57 m : Qg typ. 28 nC TJ max 175 °C Key Parameters Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TC = 25°C Power Dissipation W PD @TC = 100°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Clamping Pressure h N Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case g ––– 1.9 RθJA Junction-to-Ambient (PCB Mounted) gj ––– 50 °C/W RθJA Junction-to-Ambient (free air) g ––– 110 -40 to + 175 ––– 79 39 0.53 Max. 19 80 ±20 55 26 |
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