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M54585 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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M54585 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 4 page Aug. 1999 PIN CONFIGURATION MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54585P and M54585FP are eight-circuit Darlington tran- sistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES High breakdown voltage (BVCEO ≥ 50V) High-current driving (Ic(max) = 500mA) With clamping diodes Driving available with TTL output or with PMOS IC output Wide operating temperature range (Ta = –20 to +75 °C) APPLICATION Drives of relays and printers, digit drives of indication ele- ments such as LEDs and lamps, and MOS-bipolar logic IC interfaces FUNCTION The M54585P and M54585FP each have eight circuits, which are NPN Darlington transistors. Input transistors have resistance of 2.7k Ω between the base and input pin. A spike- killer clamping diode is provided between each output pin and GND. Output transistor emitters are all connected to the GND pin. Collector current is 500mA maximum. The maximum collec- tor-emitter voltage is 50V. The M54585FP is enclosed in a molded small flat package, enabling space-saving design. CIRCUIT DIAGRAM 7.2K 3K 2.7K COM GND INPUT OUTPUT The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω The eight circuits share the COM and GND. 1 IN1 → IN2 → IN3 → IN4 → IN5 → IN6 → IN7 → →COM COMMON →O8 IN8 → GND 2 3 4 5 6 7 8 9 18 17 16 15 14 13 12 11 10 →O7 →O6 →O5 →O4 →O3 →O2 →O1 1 NC IN1 → IN2 → IN3 → IN4 → IN5 → IN6 → COMMON →O8 IN7 → IN8 → 2 3 4 5 6 7 8 9 20 19 18 17 16 15 14 13 12 →COM GND 10 11 →O7 →O6 →O5 →O4 →O2 →O3 →O1 NC NC : No connection Package type 18P4G(P) INPUT OUTPUT INPUT OUTPUT Package type 20P2N-A(FP) |
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