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IRFI5210 Datasheet(PDF) 1 Page - International Rectifier

Part No. IRFI5210
Description  HEXFET Power MOSFET
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRFI5210
PRELIMINARY
HEXFET® Power MOSFET
PD - 9.1404A
VDSS = -100V
RDS(on) = 0.06Ω
ID = -23A
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
…
l Sink to Lead Creepage Dist. = 4.8mm
l P-Channel
l Fully Avalanche Rated
TO-220 FULLPAK
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
2.4
RθJA
Junction-to-Ambient
–––
65
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
3/16/98
Description
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
-23
ID @ TC = 100°C
Continuous Drain Current, VGS @ -10V
-16
A
IDM
Pulsed Drain Current
†
-140
PD @TC = 25°C
Power Dissipation
63
W
Linear Derating Factor
0.42
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚†
690
mJ
IAR
Avalanche Current
†
-21
A
EAR
Repetitive Avalanche Energy

6.3
mJ
dv/dt
Peak Diode Recovery dv/dt
Ġ
-5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
°C/W
S
D
G




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