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IRFI5210 Datasheet(PDF) 2 Page - International Rectifier

Part No. IRFI5210
Description  HEXFET Power MOSFET
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRFI5210
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-100
–––
–––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
-0.11
–––
V/°C
Reference to 25°C, ID = -1mA
†
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.06
VGS = 10V, ID = -12A
„
VGS(th)
Gate Threshold Voltage
-2.0
–––
-4.0
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
10
–––
–––
S
VDS = -50V, ID = -21A
†
–––
–––
-25
µA
VDS = -100V, VGS = 0V
–––
–––
-250
VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
180
ID = -21A
Qgs
Gate-to-Source Charge
–––
–––
25
nC
VDS = -80V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
97
VGS = -10V, See Fig. 6 and 13
„†
td(on)
Turn-On Delay Time
–––
17
–––
VDD = -50V
tr
Rise Time
–––
86
–––
ID = -21A
td(off)
Turn-Off Delay Time
–––
79
–––
RG = 2.5Ω
tf
Fall Time
–––
81
–––
RD = 2.4Ω, See Fig. 10
„†
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
2700 –––
VGS = 0V
Coss
Output Capacitance
–––
790
–––
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
450
–––
ƒ = 1.0MHz, See Fig. 5
†
C
Drain to Sink Capacitance
–––
12
–––
ƒ = 1.0MHz
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
pF
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ V
DD = -25V, starting TJ = 25°C, L = 3.1mH
RG = 25Ω, IAS = -21A. (See Figure 12)
… t=60s, ƒ=60Hz
ƒ ISD ≤ -21A, di/dt ≤ -480A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
† Uses IRF5210 data and test conditions
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
†
–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
-1.3
V
TJ = 25°C, IS = -12A, VGS = 0V
„
trr
Reverse Recovery Time
–––
170
260
ns
TJ = 25°C, IF = -21A
Qrr
Reverse RecoveryCharge
–––
1.2
1.8
µC
di/dt = -100A/µs
„†
Source-Drain Ratings and Characteristics
-23
-140
A
S
D
G
S
D
G




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