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IRF6602 Datasheet(PDF) 1 Page - International Rectifier |
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IRF6602 Datasheet(HTML) 1 Page - International Rectifier |
1 / 11 page www.irf.com 1 3/1/04 IRF6602/IRF6602TR1 HEXFET® Power MOSFET Notes through are on page 11 VDSS RDS(on) max Qg 20V 13m Ω@V GS = 10V 12nC 19m Ω@V GS = 4.5V DirectFET ISOMETRIC Description The IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6602 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6602 has been optimized for parameters that are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket. l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation g W PD @TA = 70°C Power Dissipation g PD @TC = 25°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient f ––– 55 RθJA Junction-to-Ambient g 12.5 ––– RθJA Junction-to-Ambient h 20 ––– °C/W RθJC Junction-to-Case i ––– 3.0 RθJ-PCB Junction-to-PCB Mounted 1.0 ––– Max. 11 8.9 89 ±20 20 48 -40 to + 150 2.3 0.018 1.5 42 Applicable DirectFET Package/Layout Pad (see p.9, 10 for details) MQ SQ SX ST MQ MX MT PD-94363C |
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