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CY7C199C
Document #: 38-05408 Rev. *A
Page 7 of 12
Data Retention Characteristics9
Timing Waveforms
Data Retention Waveform
Read Cycle No. 1 10 11
tSA
Address Set–Up to Write
Start
0
–
0
–
0
–
0
–
ns
tPWE
WE Pulse Width
8
–
9
–
15
–
15
–
ns
tSD
Data Set–Up to Write End
8
–
9
–
10
–
10
–
ns
tHD
Data Hold from Write End
0
–
0
–
0
–
0
–
ns
tHZWE
WE LOW to High Z
–
7
–
7
–
10
–
10
ns
tLZWE
WE HIGH to Low Z
3
–
3
–
3
–
3
–
ns
Parameter
Description
Condition
ALL
Unit
Min
Max
VDR
VCC for Data Retention
2.0
–
V
ICCDR
Data Retention Current
VCC = VDR=2.0V, CE ≥ VCC – 0.3V, VIN ≥
VCC – 0.3V or VIN ≤ 0.3V
–
150
uA
tCDR
Chip Deselect to Data
Retention Time
0
–
ns
tR
Operation Recovery Time
200
–
us
Notes:
9. L–version only.
10. Device is continuously selected. OE = VIL = CE.
11. WE is HIGH for Read Cycle.
Parameter
Description
12 ns
15 ns
20 ns
25 ns
Unit
Min
Max
Min
Max
Min
Max
Min
Max
CE
DATA RETENTION MODE
t
CDR
t
R
V
CC
Address
Data Out
Previous Data Valid
Data Valid
t
RC
t
AA
t
OHA