M470L6423EN0-CB3 datasheet(7/13 Pages) SAMSUNG

Part #	M470L6423EN0-CB3

Description	512MB Unbuffered SODIMM(based on sTSOP)

Download	13 Pages

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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DDR SDRAM

512MB Unbuffered SODIMM(based on sTSOP)

Rev. 1.3 March. 2004

(VDD=2.7V, T = 10°C)

* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.

Symbol

B3(DDR333@CL=2.5)

A2(DDR266@CL=2)

B0(DDR266@CL=2.5)

Unit

Notes

IDD0

1,160

1,000

mA

IDD1

1,360

1,200

mA

IDD2P

48

mA

IDD2F

400

320

mA

IDD2Q

320

290

mA

IDD3P

560

480

mA

IDD3N

880

720

mA

IDD4R

1,720

1,480

mA

IDD4W

1,720

1,440

mA

IDD5

1,800

1,640

mA

IDD6

Normal

48

mA

Low power

24

mA

Optional

IDD7A

2,680

2,360

mA

DDR SDRAM IDD spec table

M470L6423EN0 [ (32M x 8) * 8, 512MB Non ECC Module ]

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M470L6423EN0-CB3 Datasheet(PDF) 7 Page - Samsung semiconductor

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