K1S32161CC datasheet(7/10 Pages) SAMSUNG

Part #	K1S32161CC

Description	2Mx16 bit Page Mode Uni-Transistor Random Access Memory

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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7 / 10 page

Revision 0.0

July 2003

K1S32161CC

- 7 -

UtRAM

Preliminary

Address

Data Out

Previous Data Valid

Data Valid

TIMING DIAGRAMS

TIMING WAVEFORM OF READ CYCLE(1)(Address Controlled, CS=OE=VIL, WE=VIH, UB or/and LB=VIL)

TIMING WAVEFORM OF READ CYCLE(2)(WE=VIH)

tAA

tRC

tOH

(READ CYCLE)

1.

tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage

levels.

2. At any given temperature and voltage condition,

tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device

interconnection.

3. tOE(max) is met only when OE becomes enabled after tAA(max).

4. If invalid address signals shorter than min. tRC are continuously repeated for over 4us, the device needs a normal read timing(tRC) or

needs to sustain standby state for min. tRC at least once in every 4us.

Data Valid

High-Z

tRC

tOH

tAA

tBA

tOE

tOLZ

tBLZ

tLZ

tOHZ

tBHZ

tHZ

tCO

Address

UB, LB

OE

Data out

TIMING WAVEFORM OF PAGE CYCLE(READ ONLY)

Data

Valid

Data

Valid

Data

Valid

Data

Valid

Address

Valid

Address

Valid

Address

Valid

Address

Valid

Address

tPC

tPA

High Z

A20~A2

A1~A0

DQ15~DQ0

OE

tOHZ

tOE

tCO

tAA

CS1

CS2

CS1

CS2

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