NTE2539 datasheet(2/2 Pages) NTE

Part #	NTE2539

Description	Silicon NPN Transistor High Voltage, High Speed Switch

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Manufacturer	NTE [NTE Electronics]

Direct Link	http://www.nteinc.com

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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Gain–Bandwidth Product

fT

VCE = 10V, IC = 3.2A

–

20

–

MHz

Output Capacitance

Cob

VCB = 10V, f = 1MHz

–

300

–

pF

Collector–Base Breakdown Voltage

V(BR)CBO IC = 1mA, IE = 0

500

–

V

Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = ∞

400

–

V

Emitter–Base Breakdown Voltage

V(BR)EBO IE = 1mA, IC = 0

7

–

V

Collector–Emitter Sustaining Voltage

VCEX(sus) IC = 10A, IB1 = 1A, IB2 = –4A,

L = 200

µH Clamped

400

–

V

Turn–On Time

ton

IC = 20A, IB1 = 4A, IB2 = –8A,

Ω

–

0.5

µs

Storage Time

tstg

RL = 10Ω, VCC = 200V

–

2.5

µs

Fall Time

tf

–

0.3

µs

.615 (15.62)

.190 (4.82)

.126

(3.22)

Dia

.215 (5.47)

BC

E

.787

(20.0)

.787

(20.0)

.591

(15.02)

C

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