M464S1724DTS-C7C datasheet(5/11 Pages) SAMSUNG

Part #	M464S1724DTS-C7C

Description	16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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M464S1724DTS

Rev. 0.1 Sept. 2001

PC133/PC100 SODIMM

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted, T A = 0 to 70

°C)

Parameter

Sym-

bol

Test Condition

Version

Unit

Note

-7C

-7A

-1H

-1L

Operating current

(One bank active)

ICC1

Burst length = 1

tRC

≥ tRC(min)

IO = 0 mA

560

520

mA

1

Precharge standby current

in power-down mode

ICC2P

CKE

≤ V IL(max), tCC = 10ns

16

mA

ICC2PS

CKE & CLK

≤ V IL(max), tCC =∞

16

Precharge standby current

in non power-down mode

ICC2N

CKE

≥ V IH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

160

mA

ICC2NS

CKE

≥ V IH(min), CLK ≤ VIL(max), tCC =∞

Input signals are stable

80

Active standby current in

power-down mode

ICC3P

CKE

≤ V IL(max), tCC = 10ns

40

mA

ICC3PS

CKE & CLK

≤ V IL(max), tCC =∞

40

Active standby current in

non power-down mode

(One bank active)

ICC3N

CKE

≥ V IH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

240

mA

ICC3NS

CKE

≥ V IH(min), CLK ≤ VIL(max), tCC =∞

Input signals are stable

200

mA

Operating current

(Burst mode)

ICC4

IO = 0 mA

Page burst

4Banks activated

tCCD = 2CLKs

680

640

mA

1

Refresh current

ICC5

tRC

≥ tRC(min)

1000

920

880

mA

2

Self refresh current

ICC6

CKE

≤ 0.2V

C

16

mA

L

6.4

mA

1. Measured with outputs open.

2. Refresh period is 64ms.

3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ)

Notes :

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M464S1724DTS-C7C Datasheet(PDF) 5 Page - Samsung semiconductor

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