HAL700SF-K datasheet(8/12 Pages) MICRONAS

Part #	HAL700SF-K

Description	Dual Hall-Effect Sensor with Independent Outputs

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Manufacturer	MICRONAS [Micronas]

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HAL700

ADVANCE INFORMATION

8

Micronas

3.6. Electrical Characteristics

at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V, as not otherwise specified in Conditions.

Typical Characteristics for TJ = 25 °C and VDD = 5 V.

Fig. 3–2: Recommended pad sizes for SOT-89B

Dimensions in mm

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Conditions

IDD

Supply Current

1

2

5.5

9

mA

TJ = 25 °C

IDD

Supply Current

over Temperature Range

17

10

mA

VDDZ

Overvoltage Protection

at Supply

1

28.5

32

V

IDD = 25 mA, TJ = 25 °C, t = 20 ms

VOZ

Overvoltage Protection

at Output

2, 3

2832V

IOH = 25 mA, TJ = 25 °C, t = 20 ms

VOL

Output Voltage

2, 3

130

280

mV

IOL = 10 mA, TJ = 25 °C

VOL

Output Voltage over

Temperature Range

2, 3

130

400

mV

IOL = 10 mA,

IOH

Output Leakage Current

2, 3

0.06

0.1

µA

Output switched off, TJ = 25 °C,

VOH = 3.8 V to 24 V

IOH

Output Leakage Current over

Temperature Range

2, 3

−

10

µA

Output switched off, TJ ≤ 140 °C,

VOH = 3.8 V to 24 V

fosc

Internal sampling frequency

−

130

150

−

kHz

TJ = 25 °C

fosc

Internal sampling frequency

over Temperature Range

−

100

150

−

kHz

ten(O)

Enable Time of Output after

Setting of VDD

50

100

µsV

DD = 12 V,

B>Bon + 2 mT or B<Boff − 2mT

tr

Output Rise Time

2, 3

1.2

µsV

DD = 12 V, RL= 20 kΩ, CL= 20 pF

tf

Output FallTime

2, 3

0.2

1.6

µsV

DD = 12 V, RL= 20 kΩ, CL= 20 pF

RthSB

SOT-89B

Thermal Resistance Junction to

Substrate Backside

−−

150

200

K/W

Fiberglass Substrate

30 mm x 10mm x 1.5mm,

pad size see Fig. 3–2

5.0

2.0

1.0

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