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CY62167DV18L-55 Datasheet(PDF) 3 Page - Cypress Semiconductor

Part # CY62167DV18L-55
Description  16M (1024K x 16) Static RAM
Download  11 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62167DV18L-55 Datasheet(HTML) 3 Page - Cypress Semiconductor

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PRELIMINARY
CY62167DV18
MoBL2™
Document #: 38-05326 Rev. *A
Page 3 of 11
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage to Ground
Potential ..........................................
−0.2V to V
CCMAX + 0.2V
DC Voltage Applied to Outputs
in High-Z State[3] ....................................
−0.2V to V
CC + 0.2V
DC Input Voltage[3] ................................
−0.2V to V
CC + 0.2V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... > 200 mA
Operating Range
Range
Ambient Temperature (TA)
VCC
[4]
Industrial
−40°C to +85°C
1.65V to 1.95V
Product Portfolio
Product
VCC Range(V)
Speed
(ns)
Power Dissipation
Operating, Icc (mA)
Standby, ISB2 (µA)
f = 1 MHz
f = fMAX
Min.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
CY62167DV18L
1.65
1.8
1.95
55
1.5
5
15
30
2.5
30
70
12
25
2.5
30
CY62167DV18LL
1.65
1.8
1.95
55
1.5
5
15
30
2.5
20
70
12
25
2.5
20
DC Electrical Characteristics (over the operating range)
Parameter
Description
Test Conditions
CY62167DV18-55
CY62167DV18-70
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
VOH
Output HIGH Voltage
IOH = −0.1 mA
VCC = 1.65V
1.4
1.4
V
VOL
Output LOW Voltage
IOL = 0.1 mA
VCC = 1.65V
0.2
0.2
V
VIH
Input HIGH Voltage
1.4
VCC +
0.2
1.4
VCC +
0.2
V
VIL
Input LOW Voltage
–0.2
0.4
–0.2
0.4
V
IIX
Input Leakage Current GND < VI < VCC
–1
+1
–1
+1
µA
IOZ
Output Leakage
Current
GND < VO < VCC, Output
Disabled
–1
+1
–1
+1
µA
ICC
VCC Operating Supply
Current
f = fMAX = 1/tRC
Vcc = 1.95V,
IOUT = 0mA,
CMOS level
15
30
12
25
mA
f = 1 MHz
1.5
5
1.5
5
ISB1
Automatic CE
Power-down Current
− CMOS Inputs
CE1 > VCC − 0.2V, CE2 <
0.2V, VIN > VCC − 0.2V,
VIN < 0.2V, f = fMAX
(Address and Data Only), f
= 0 (OE, WE, BHE and
BLE)
L
2.5
30
2.5
30
µA
LL
2.5
20
2.5
20
ISB2
Automatic CE
Power-down Current
− CMOS Inputs
CE1 > VCC − 0.2V, CE2 <
0.2V, VIN > VCC − 0.2V or
VIN < 0.2V, f = 0,
VCC=1.95V
L
2.5
30
2.5
30
µA
LL
2.5
20
2.5
20
Capacitance[5]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz
VCC = VCC(typ)
6
pF
COUT
Output Capacitance
8
pF


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