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TSM120N06LCR Datasheet(PDF) 4 Page - Taiwan Semiconductor Company, Ltd |
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TSM120N06LCR Datasheet(HTML) 4 Page - Taiwan Semiconductor Company, Ltd |
4 / 6 page TSM120N06LCR Taiwan Semiconductor 4 Version: A1610 CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Capacitance vs. Drain-Source Voltage BVDSS vs. Junction Temperature Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage Normalized Thermal Transient Impedance, Junction-to-Case t, Square Wave Pulse Duration (sec) VDS, Drain to Source Voltage (V) TJ, Junction Temperature (°C) VSD, Body Diode Forward Voltage (V) VDS, Drain to Source Voltage (V) 0.8 0.9 1 1.1 1.2 -75 -50 -25 0 25 50 75 100 125 150 I D=1mA 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 25℃ 150℃ -55℃ 0 500 1000 1500 2000 2500 3000 0 10 20 30 40 50 60 CISS COSS CRSS 0.1 1 10 100 1000 0.1 1 10 100 R DS(ON) SINGLE PULSE RӨJC=1.8°C/W T C=25°C 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 SINGLE PULSE RӨJC=1.8°C/W Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single Notes: Duty = t 1 / t2 T J = TC + PDM x Z ӨJC x RӨJC |
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