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NTE244 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE244 Datasheet(HTML) 1 Page - NTE Electronics |
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1 / 2 page  NTE243 (NPN) & NTE244 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: D High DC Current Gain: hFE = 3000 Typ @ IC = 4A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 80V Min @ 100mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 4A = 3V Max @ IC = 8A D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO 80V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector–Base Voltage, VCB 80V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter–Base Voltage, VEB 5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current, IC Continuous 8A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak 16A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Base Current, IB 120mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Power Dissipation (TC = +25°C), PD 100W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate Above 25 °C 0.571W/ °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature Range, TJ –65 ° to +200°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –65 ° to +200°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance, Junction–to–Case, RthJC 1.78 °C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter SustainingVoltage VCEO(sus) IC = 100mA, IB = 0, Note 1 80 – – V Collector Cutoff Current ICEO VCE = 40V, IE = 0 – – 0.5 mA ICEX VCE = 80V, VBE(off) = 1.5V – – 0.5 mA VCE = 80V, VBE(off) = 1.5V, TA = +150°C – – 5.0 mA Emitter Cutoff Current IEBO VBE = 5V, IC = 0 – – 2.0 mA Note 1. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2% |
Similar Part No. - NTE244 |
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Similar Description - NTE244 |
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