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2N2150 Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. 2N2150
Description  NPN POWER SILICON TRANSISTOR
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/277
Devices
Qualified Level
2N2150
2N2151
JANTX
MAXIMUM RATINGS (TC = 25
0C unless otherwise noted)
Ratings
Symbol
Value
Units
Collector-Emitter Voltage
VCEO
100
Vdc
Collector-Base Voltage
VCBO
150
Vdc
Emitter-Base Voltage
VEBO
8.0
Vdc
Base Current
IB
2.0
Adc
Collector Current
IC
2.0
Adc
Total Power Dissipation
@ Tc = +100
0C(1)
PT
30
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
3.3
0C/W
1) Derate linearly @ 0.3 W/
0C for TC > +1000C
TO-111*
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TC = +25
0C)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 50 mAdc
V(BR)CEO
100
Vdc
Collector-Emitter Breakdown Voltage
IC = 100 µAdc
VCBO
150
Vdc
Collector-Emitter Cutoff Current
VCE = 80 Vdc
ICEO
10
µAdc
Collector-Base Cutoff Current
VCB = 120 Vdc
ICBO
5.0
µAdc
Collector-Emitter Cutoff Current
VCE = 120 Vdc, VBE = -1.0 Vdc
ICEX
5.0
µAdc
Emitter-Base Cutoff Current
VEB = 8.0 Vdc
IEBO
2.0
µAdc
Collector-Emitter Cutoff Current
VCE = 120 Vdc, VBE = 0 Vdc
ICES
5.0
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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