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VG36648041DTL-7L Datasheet(PDF) 5 Page - List of Unclassifed Manufacturers

Part # VG36648041DTL-7L
Description  CMOS Synchronous Dynamic RAM
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Document :1G5-0177
Rev.2
Page 5
VIS
VG36644041DT / VG36648041DT / VG36641641DT
CMOS Synchronous Dynamic RAM
Absolute Maximum Ratings
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The
device is not meant to be operated under conditions outside the limits described in the operational section of this
specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Parameter
Symbol
Conditions
Value
Unit
Supply Voltage
VDD
with respect to VSS
-0.5 to 4.6
V
Supply Voltage for Output
VDDQ
with respect to VSSQ
-0.5 to 4.6
V
Input Voltage
VI
with respect to VSS
-0.5 to VDD+0.5
V
Output Voltage
VO
with respect to VSSQ
-0.5 to VDDQ+0.5
V
Short circuit output current
IO
50
mA
Power dissipation
PD
Ta = 25 °C
1
W
Operating temperature
TOPT
0 to 70
°C
Storage temperature
TSTG
-65 to 150
°C
Recommended Operating Conditions (Ta = 0 ~ 70 °C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Min.
Typ.
Max.
Supply Voltage
VDD
3.0
3.3
3.6
V
Supply Voltage for DQ
VDDQ
0
0
0
V
Ground
VSS
3.0
3.3
3.6
V
Ground for DQ
VSSQ
0
0
0
V
High Level Input Voltage (all inputs)
VIH
2.0
VDD + 0.3
V
Low Level Input Voltage (all inputs)
VIL
-0.3
0.8
V
Pin Capacitance (Ta = 0 ~ 70°C, VDD = VDDQ = 3.3 0.3V , VSS = VSSQ = 0V, unless otherwise noted)
Parameter
Symbol
Min
Max
Unit
Input Capacitance, address & control pin
CIN
2.5
3.8
pF
Input Capacitance, CLK pin
CCLK
2.5
3.5
pF
Data input / output capacitance
CI/O
4.0
6.5
pF
±


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