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NTE2405 Datasheet(PDF) 1 Page - NTE Electronics

Part # NTE2405
Description  Silicon Complementary Transistors Darlington, General Purpose
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Manufacturer  NTE [NTE Electronics]
Direct Link  http://www.nteinc.com
Logo NTE - NTE Electronics

NTE2405 Datasheet(HTML) 1 Page - NTE Electronics

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NTE2404 (NPN) & NTE2405 (PNP)
Silicon Complementary Transistors
Darlington, General Purpose
Description:
The NTE2404 (NPN) and NTE2405 (PNP) are silicon complementary Darlington transistors in an
SOT–23 type surface mount case designed for general–purpose applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCBO
40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous
300mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
800mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TA = +25°C, Note 1), PD
350mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ
+150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–65
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Ambient (Note 1), RthJA
350K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Mounted on a ceramic substrate of .590 (15mm) x .590 (15mm) x .027 (0.7mm).
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Current
ICBO
VCBO = 30V
100
nA
Emitter–Base Current
IEBO
VEB = 10V
100
nA
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 10mA
30
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 10µA
40
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 100nA
10
V
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 100mA, IB = 0.1mA
1
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 100mA, IB = 0.1mA
1.5
V
DC Current Gain
hFE
IC = 1mA, VCE = 5V
4000
IC = 10mA, VCE = 5V
10000
IC = 100mA, VCE = 5V
20000
Transition Frequency
fT
IC = 30mA, VCE = 5V, f = 100MHz
220
MHz
Collector Capacitance
Cc
IE = 0, VCB = 30V
3.5
pF


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