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K6R1016V1C-I20 Datasheet(PDF) 4 Page - Samsung semiconductor

Part # K6R1016V1C-I20
Description  64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6R1016V1C-I20 Datasheet(HTML) 4 Page - Samsung semiconductor

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K6R1016V1C-C/C-L, K6R1016V1C-I/C-P
CMOS SRAM
Revision 3.3
- 4 -
October 2000
for AT&T
TEST CONDITIONS*
* The above test conditions are also applied at industrial temperature range.
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS(TA=0 to 70
°C, Vcc=3.3V+0.3V/-0.15V, unless otherwise noted.)
Output Loads(B)
DOUT
5pF*
319
353
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
+3.3V
* Including Scope and Jig Capacitance
Output Loads(A)
DOUT
RL = 50
ZO = 50
VL = 1.5V
30pF*
* Capacitive Load consists of all components of the
test environment.
CAPACITANCE*(TA=25
°C, f=1.0MHz)
* Capacitance is sampled and not 100% tested.
Item
Symbol
Test Conditions
MIN
Max
Unit
Input/Output Capacitance
CI/O
VI/O=0V
-
8
pF
Input Capacitance
CIN
VIN=0V
-
6
pF
*
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70
°C, Vcc=3.3V+0.3V/-0.15V, unless otherwise specfied)
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
ILI
VIN=VSS to VCC
-2
2
µA
Output Leakage Current
ILO
CS=VIH or OE=VIH or WE=VIL
VOUT=VSS to VCC
-2
2
µA
Operating Current
ICC
Min. Cycle, 100% Duty
CS=VIL, VIN = VIH or VIL, IOUT=0mA
10ns
-
105
mA
12ns
-
95
15ns
-
93
20ns
-
90
Standby Current
ISB
Min. Cycle, CS=VIH
-
30
mA
ISB1
f=0MHz, CS
≥VCC-0.2V,
VIN
≥VCC-0.2V or VIN ≤0.2V
Normal
-
5
mA
L-Ver.
-
0.5
Output Low Voltage Level
VOL
IOL=8mA
-
0.4
V
Output High Voltage Level
VOH
IOH=-4mA
2.4
-
V


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