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K6R1016V1C-I20 Datasheet(PDF) 4 Page - Samsung semiconductor |
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K6R1016V1C-I20 Datasheet(HTML) 4 Page - Samsung semiconductor |
4 / 11 page K6R1016V1C-C/C-L, K6R1016V1C-I/C-P CMOS SRAM Revision 3.3 - 4 - October 2000 for AT&T TEST CONDITIONS* * The above test conditions are also applied at industrial temperature range. Parameter Value Input Pulse Levels 0V to 3V Input Rise and Fall Times 3ns Input and Output timing Reference Levels 1.5V Output Loads See below AC CHARACTERISTICS(TA=0 to 70 °C, Vcc=3.3V+0.3V/-0.15V, unless otherwise noted.) Output Loads(B) DOUT 5pF* 319 Ω 353 Ω for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ +3.3V * Including Scope and Jig Capacitance Output Loads(A) DOUT RL = 50 Ω ZO = 50 Ω VL = 1.5V 30pF* * Capacitive Load consists of all components of the test environment. CAPACITANCE*(TA=25 °C, f=1.0MHz) * Capacitance is sampled and not 100% tested. Item Symbol Test Conditions MIN Max Unit Input/Output Capacitance CI/O VI/O=0V - 8 pF Input Capacitance CIN VIN=0V - 6 pF * DC AND OPERATING CHARACTERISTICS*(TA=0 to 70 °C, Vcc=3.3V+0.3V/-0.15V, unless otherwise specfied) * The above parameters are also guaranteed at industrial temperature range. Parameter Symbol Test Conditions Min Max Unit Input Leakage Current ILI VIN=VSS to VCC -2 2 µA Output Leakage Current ILO CS=VIH or OE=VIH or WE=VIL VOUT=VSS to VCC -2 2 µA Operating Current ICC Min. Cycle, 100% Duty CS=VIL, VIN = VIH or VIL, IOUT=0mA 10ns - 105 mA 12ns - 95 15ns - 93 20ns - 90 Standby Current ISB Min. Cycle, CS=VIH - 30 mA ISB1 f=0MHz, CS ≥VCC-0.2V, VIN ≥VCC-0.2V or VIN ≤0.2V Normal - 5 mA L-Ver. - 0.5 Output Low Voltage Level VOL IOL=8mA - 0.4 V Output High Voltage Level VOH IOH=-4mA 2.4 - V |
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