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K6R1016V1C-I10 Datasheet(PDF) 9 Page - Samsung semiconductor

Part # K6R1016V1C-I10
Description  64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6R1016V1C-I10 Datasheet(HTML) 9 Page - Samsung semiconductor

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K6R1016V1C-C/C-L, K6R1016V1C-I/C-P
CMOS SRAM
Revision 3.3
- 9 -
October 2000
for AT&T
DATA RETENTION CHARACTERISTICS*(TA=0 to 70
°C)
* The above parameters are also guaranteed at industrial temperature range.
Data Retention Characteristic is for L-ver only.
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
VCC for Data Retention
VDR
CS
≥VCC-0.2V
2.0
-
3.6
V
Data Retention Current
IDR
VCC=3.0V, CS
≥VCC-0.2V
VIN
≥VCC-0.2V or VIN≤0.2V
-
-
0.4
mA
VCC=2.0V, CS
≥VCC-0.2V
VIN
≥VCC-0.2V or VIN≤0.2V
-
-
0.3
Data Retention Set-Up Time
tSDR
See Data Retention
Wave form(below)
0
-
-
ns
Recovery Time
tRDR
5
-
-
ms
DATA RETENTION WAVE FORM
CS controlled
VCC
3.0V
VIH
VDR
CS
GND
Data Retention Mode
CS
≥VCC - 0.2V
tSDR
tRDR


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