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FDS6675A Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDS6675A Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 5 page  February 2003 2003 Fairchild Semiconductor Corporation FDS6675A Rev C (W) FDS6675A 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 25V). Applications • Power management • Load switch • Battery protection Features • –11 A, –30 V RDS(ON) = 13 m Ω @ V GS = –10 V RDS(ON) = 19 m Ω @ V GS = –4.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability S D S S SO-8 D D D G D D D D S S S G Pin 1 SO-8 4 3 2 1 5 6 7 8 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –30 V VGSS Gate-Source Voltage ±25 V ID Drain Current – Continuous (Note 1a) –11 A – Pulsed –50 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 PD (Note 1c) 1 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6675A FDS6675A 13’’ 12mm 2500 units |
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