NTE2389 datasheet(1/2 Pages) NTE

Part #	NTE2389

Description	MOSFET N-Ch, Enhancement Mode High Speed Switch

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Manufacturer	NTE [NTE Electronics]

Direct Link	http://www.nteinc.com

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NTE2389

MOSFET

N–Ch, Enhancement Mode

High Speed Switch

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Drain–Source Voltage, VDS

60V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Drain–Gate Voltage (RGS = 20kΩ), VDGR

60V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Drain Current, ID

Continuous

35A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed

152A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate–Source Voltage, VGS

±30V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Maximum Power Dissipation, PD

125W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature, TJ

+175

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature range, Tstg

–55

° to +175°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Maximum Thermal Resistance, Junction–to–Case, RthJC

1.2

°C/W

. . . . . . . . . . . . . . . . . . . . . . . . . . . .

Typical Thermal Resistance, Junction–to–Ambient, RthJA

60

°C/W

. . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static Ratings

Drain–Source Breakdown Voltage

BVDSS ID = 0.25mA, VGS = 0

60

–

V

Gate Threshold Voltage

VGS(th) ID = 1mA, VDS = VGS

2.1

3.0

4.0

V

Zero Gate Voltage Drain Current

IDSS

VDS = 60V,

TJ = +25°C

–

1

10

µA

VGS = 0

TJ = +125°C

–

0.1

1.0

mA

Gate–Source Leakage Current

IGSS

VGS = ±30V, VDS = 0

–

10

100

nA

Drain–Source On–State Resistance

RDS(on) ID = 20A, VGS = 10V

–

40

45

m

Ω

Dynamic Ratings

Forward Transconductance

gfs

ID = 20A, VDS = 25V

8

13.5

–

mhos

Input Capacitance

Ciss

VDS = 25V, VGS = 0, f = 1MHz

–

1650 2000

pF

Output Capacitance

Coss

–

560

750

pF

Reverse Transfer Capacitance

Crss

–

300

400

pF

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