STB12NK80Z-S datasheet(1/9 Pages) STMICROELECTRONICS

Part #	STB12NK80Z-S

Description	N-CHANNEL 800V - 0.65ohm - 10.5A I2SPAK Zener-Protected SuperMESH Power MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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February 2004

STB12NK80Z-S

N-CHANNEL 800V - 0.65

Ω -10.5A I2SPAK

Zener-Protected SuperMESH™Power MOSFET

s

TYPICAL RDS(on) = 0.65 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

GATE CHARGE MINIMIZED

s

VERY LOW INTRINSIC CAPACITANCES

s

VERY GOOD MANUFACTURING

REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established strip-

based PowerMESH™ layout. In addition to pushing

on-resistance significantly down, special care is tak-

en to ensure a very good dv/dt capability for the

most demanding applications. Such series comple-

ments ST full range of high voltage MOSFETs in-

cluding revolutionary MDmesh™ products.

APPLICATIONS

s

IDEAL FOR HIGH DENSITY LOW PROFILE

ADAPTERS

ORDERING INFORMATION

TYPE

VDSS

RDS(on)

ID

Pw

STB12NK80Z-S

800 V

< 0.75

Ω 10.5 A 190 W

SALES TYPE

MARKING

PACKAGE

PACKAGING

STB12NK80Z-S

B12NK80Z

I2SPAK

TUBE

I2SPAK

1

2

3

INTERNAL SCHEMATIC DIAGRAM

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STB12NK80Z-S Datasheet(PDF) 1 Page - STMicroelectronics

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